Model-Independent Predictions for Low Energy Isoscalar Heavy Baryon Observables in the Combined Heavy Quark and Large NcN_c Expansion

Model-independent predictions for excitation energies, semileptonic form factors and electromagnetic decay rates of isoscalar heavy baryons and their low energy excited states are discussed in terms of the combined heavy quark and large $N_c$ expansion. At leading order, the observables are completely determined in terms of the known excitation energy of the first excited state of $\Lambda_c$. At next-to-leading order in the combined expansion all heavy baryon observables can be expressed in a model-independent way in terms of two experimentally measurable quantities. We list predictions at leading and next-to-leading order.Comment: 7 pages, LaTe

Excited Heavy Baryons and Their Symmetries III: Phenomenology

Phenomenological applications of an effective theory of low-lying excited states of charm and bottom isoscalar baryons are discussed at leading and next-to-leading order in the combined heavy quark and large $N_c$ expansion. The combined expansion is formulated in terms of the counting parameter $\lambda\sim 1/m_Q, 1/N_c$; the combined expansion is in powers of $\lambda^{1/2}$. We work up to next-to-leading order. We obtain model-independent predictions for the excitation energies, the semileptonic form factors and electromagnetic decay rates. The spin-averaged mass of the doublet of the first orbitally excited sate of $\Lambda_b$ is predicted to be approximately $5920 MeV$. It is shown that in the combined limit at leading and next-to-leading order there is only one independent form factor describing $\Lambda_b \to \Lambda_c \ell \bar{\nu}$; similarly, $\Lambda_b \to \Lambda_{c}^{*} \ell \bar{\nu}$ and $\Lambda_b \to \Lambda_{c1} \ell \bar{\nu}$ decays are described by a single independent form factor. These form factors are calculated at leading and next-to-leading order in the combined expansion. The electromagnetic decay rates of the first excited states of $\Lambda_c$ and $\Lambda_b$ are determined at leading and next-to leading order. The ratio of radiative decay rates $\Gamma(\Lambda_{c}^{*} \to \Lambda_c \gamma) / \Gamma(\Lambda_{b1} \to \Lambda_b \gamma)$ is predicted to be approximately 0.2, greatly different from the heavy quark effective theory value of unity.Comment: 21 pages, 2 figure

Large NcN_c Universality of The Baryon Isgur--Wise Form Factor: The Group Theoretical Approach

In a previous article, it has been proved under the framework of chiral soliton model that the same Isgur--Wise form factor describes the semileptonic $\Lambda_b\to\Lambda_c$ and $\Sigma^{(*)}_b\to\Sigma^{(*)}_c$ decays in the large $N_c$ limit. It is shown here that this result is in fact independent of the chiral soliton model and is solely the consequence of the spin-flavor SU(4) symmetry which arises in the baryon sector in the large $N_c$ limit.Comment: 10 pages in REVTeX, no figure

Reflection high-energy electron diffraction studies of the growth of lnAs/Ga_(1-x)In_xSb strained-layer superlattices

We have used reflection high‐energy electron diffraction to study the surface periodicity of the growth front of InAs/GaInSb strained‐layer superlattices (SLSs). We found that the apparent surface lattice spacing reproducibly changed during layers which subsequent x‐ray measurements indicated were coherently strained. Abrupt changes in the measured streak spacings were found to be correlated to changes in the growth flux. The profile of the dynamic streak spacing was found to be reproducible when comparing consecutive periods of a SLSs or different SLSs employing the same shuttering scheme at the InAs/GaInSb interface. Finally, when the interface shuttering scheme was changed, it was found that the dynamic streak separation profile also changed. Large changes in the shuttering scheme led to dramatic differences in the streak separation profile, and small changes in the shuttering scheme led to minor changes in the profile. In both cases, the differences in the surface periodicity profile occurred during the parts of the growth where the incident fluxes differed

New negative differential resistance device based on resonant interband tunneling

We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure

Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures

We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×10^5 A/cm^2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers

Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures

We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-Å-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region

Standardization and qualification of computer programs for circuit design

Study presents methods and initial procedures which may be obtained for development of more efficient uniform network analysis input language and theoretical tools to prove equivalence of data representations

Airborne Computer Technology

The development of airborne digital computer has been greatly influenced by rapid technological advances. This paper provides an overview of the present status and the direction of further evolution. It discusses the changes that are taking place in the areas of hardware, software and computer organization; and suggests a number of approaches towards a broadened usage of airborne computer to take advantage of its increasing capability and decreasing cost